K4M56323LE 90fbga equivalent, 2m x 32bit x 4 banks mobile sdram in 90fbga.
* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3.
DataShee
ORDERING INFORMATION
Part No. K4M56323LE-M(E)E/N/S/C/L/R80 K4M56323LE-M(E)E/N/S/C/L/R1H K4M56323LE-M(E)E/N/S.
The K4M56323LE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .
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